the kinetics and mechanism of the reaction of 5-nitro-1h-benzo[d] imidazole to produce 6-nitro-1h-benzo[d] imidazole was studied by employing hybrid meta-density functional theory. mpwblk/6-31+g** level calculations were carried out to obtain energies and optimize the geometries of all stationary points along the pes, and determine the harmonic vibrational frequencies. two transition states (ts...

In this paper, we have presented a heterojunction gate all around nanowiretunneling field effect transistor (GAA NW TFET) and have explained its characteristicsin details. The proposed device has been structured using Germanium for source regionand Silicon for channel and drain regions. Kane's band-to-band tunneling model hasbeen used to account for the amount of band-to...

Aggressive scaling of MOS devices requires use of ultra-thin gate oxides to maintain a reasonable short channel effect and to take the advantage of higher density, high speed, lower cost etc. Such thin oxides give rise to high electric fields, resulting in considerable gate tunneling current through gate oxide in nano regime. Consequently, accurate analysis of gate tunneling current is very imp...

We consider the effect of electron correlations on tunneling from a 2D electron layer in a magnetic field parallel to the layer. A tunneling electron can exchange its momentum with other electrons, which leads to an exponential increase of the tunneling rate compared to the single-electron approximation. The effect depends on the interrelation between the dynamics of tunneling and momentum exch...

Two-dimensional (2-D) device simulation is used to investigate the tunneling current of metal ultra-thin-oxide silicon tunneling diodes with different oxide roughness. With the conformal nature of ultrathin oxide, the tunneling current density is simulated in both direct tunneling and Fowler–Nordheim (FN) tunneling regimes with different oxide roughness. The results show that oxide roughness dr...

At total filling factor νT = 1, interlayer phase coherence in quantum Hall bilayers can result in a tunneling anomaly resembling the Josephson effect in the presence of strong fluctuations. The most robust experimental signature of this effect is a strong enhancement of the tunneling conductance at small voltages. The height and width of the conductance peak depend strongly on the area and tunn...

Tunneling field effect transistors (TFETs) have been proposed to overcome the fundamental issues of Si based transistors, such as short channel effect, finite leakage current, and high contact resistance. Unfortunately, most if not all TFETs are operational only at cryogenic temperatures. Here we report that iron (Fe) quantum dots functionalized boron nitride nanotubes (QDs-BNNTs) can be used a...